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profet ? BTS409L1 data sheet 1 2013 - 10 - 10 smart high - s ide power switch features ? overload protection ? current limitation ? short circuit protection ? thermal shutdown ? overvoltage protection (including load dump) ? fast demagnetization of inductive lo ads ? reverse battery protection 1 ) ? undervoltage and overvoltage shutdown with auto - restart and hysteresis ? open drain diagnostic output ? open load detection in on - state ? cmos compatible input ? loss of ground and loss of v bb protection ? e lectro s ta tic d ischarge ( esd ) protection ? green product (rohs compliant) ? aec qualified application ? ? c compatible power switch with diagnostic feedback for 12 v and 24 v dc grounded loads ? all types of resistive, inductive and cap acitve loads ? replaces electromechanical relays, fuses and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input and diagnostic feedback, monolithically integrated in smart sipmos ? te chnology. fully protected by embedded protection functions. 1 ) with external current limit (e.g. resistor r gnd =150 ? ) in gnd connection, resistor in series with st connection, reverse load current limited by connected load. product summary overvoltage protection v bb(az) 43 v operating voltage v bb(on) 5.0 ... 34 v on - state resistance r on 200 m ? load current (iso) i l(iso) 2.3 a current limitation i l(scr) 4 a pg - to263 - 5 - 2 open load detection short to vbb + v bb in st signal gnd esd profet ? out gnd logic voltage source charge pump level shifter temperature sensor rectifier l imit for unclampe d ind. loads gate protection 2 4 1 3 5 load gnd load v logic gnd r o overvoltage protection voltage sensor current limit
BTS409L1 data sheet 2 2013 - 10 - 10 pin symbol function 1 gnd - logic ground 2 in i input, activates the power switch in case of logical high signal 3 v bb + positive power supply voltage, the tab is shorted to this pin 4 st s diagnostic feedback, low on failure 5 out (load, l) o output to the load
BTS409L1 data sheet 3 2013 - 10 - 10 maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 4 ) v bb 43 v supply voltage for short circuit protection t j start = - 40 ...+150c v bb 34 v load dump protection 2 ) v loaddump = u a + v s , u a = 13.5 v r i 3 ) = 2 ? , r l = 5.3 ? , t d = 200 ms, in= low or high v load dump 4 ) 60 v load current (short ci rcuit current, see page 5 ) i l self - limited a operating temperature range storage temperature range t j t stg - 40 ...+150 - 55 ...+150 c power dissipation (dc), t c ? 25 c p tot 18 w inductive load switch - off energy dissipation, single pulse v bb = 12v, t j,start = 150c, t c = 150c const. i l = 2.3 a, z l = 98 mh, 0 ? : e as 335 mj electrostatic discharge capability (esd) in: (human body model) all other pins: acc. mil - std883d, method 3015.7 and esd assn. std. s5.1 - 1993 v esd 1.0 2.0 kv input voltage (dc) v in - 10 ... +16 v current through input pin (dc) current through status pin (dc) see internal circuit diagrams page 7 i in i st ? 2.0 ? 5.0 ma thermal characteristics parameter and conditions symbol values unit min typ max thermal resistance chip - case: junction - ambient (free air): r thjc r thja -- -- -- -- 7 75 k/w smd version, device on pcb 5 ) : 39 2 ) supply voltages higher than v bb(az) require an external current limit for the gnd and status pins, e.g. with a 150 ? resistor in the gnd connection and a 15 k ? resistor in series with t he status pin. a resistor for the protection of the input is integrated. 3 ) r i = internal resistance of the load dump test pulse generator 4 ) v load dump is setup without the dut connected to the generator per iso 7637 - 1 and din 40839 5 ) device on 50mm*50mm *1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 ? m thick) copper area for v bb connection. pcb is vertical without blown air.
BTS409L1 data sheet 4 2013 - 10 - 10 electrical charact eristics parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on - state resistance (pin 3 to 5) i l = 1.8 a t j =25 c: t j =150 c: r on -- 160 320 200 400 m ? nominal load current, iso norm (pin 3 to 5) v on = 0.5 v, t c = 85 c i l(iso) 1.8 2.3 -- a output current (pin 5 ) while gnd disconnected or gnd pulled up, v bb =30 v, v in = 0, see diagram page 8 i l(gndhigh) -- -- 10 ma turn - on time in to 90% v out : turn - off time in to 10% v out : r l = 12 ? , t j = - 40...+150c t on t off 80 80 200 200 400 400 ? s slew rate on 10 to 30% v out , r l = 12 ? , t j = - 40...+150c d v /dt on 0.1 -- 1 v / ? s slew rate off 70 to 40% v out , r l = 12 ? , t j = - 40. ..+150c - d v /dt off 0.1 -- 1 v / ? s operating parameters operating voltage 6 ) t j = - 40...+150c: v bb(on) 5.0 -- 34 v undervoltage shutdown t j = - 40...+150c: v bb(under) 3.5 -- 5.0 v undervoltage restart t j = - 40...+25c: t j =+150c: v bb(u rst) -- -- 5.0 7.0 v undervoltage restart of charge pump see diagram page 12 t j = - 40...+150c: v bb(ucp) -- 5.6 7.0 v undervoltage hysteresis ? v bb(under) = v bb(u rst) - v bb(under) ? v bb(under) -- 0.2 -- v overvoltage shutdown t j = - 4 0...+150c: v bb(over) 34 -- 43 v overvoltage restart t j = - 40...+150c: v bb(o rst) 33 -- -- v overvoltage hysteresis t j = - 40...+150c: ? v bb(over) -- 0.5 -- v overvoltage protection 7 ) t j = - 40...+150c: i bb =40 ma v bb(az) 42 47 -- v standby current ( pin 3) v in =0 t j = - 40...+25c : t j = 150c: i bb(off) -- -- 10 12 23 28 ? a 6 ) at supply voltage increase up to v bb = 5.6 v typ without charge pump, v out ? v bb - 2 v 7 ) see also v on(cl) in table of protection fun ctions and circuit diagram page 8 .
BTS409L1 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max data sheet 5 2013 - 10 - 10 leakage output current (included in i bb(off) ) v in =0 i l(off) -- -- 12 ? a operating current (pin 1) 8 ) , v in =5 v, t j = - 40...+150c i gnd -- 1.8 3.5 ma protection functions 9 ) i nitial peak short circuit current limit (pin 3 to 5) i l(scp) t j = - 40c: t j =25c: t j =+150c: 5.5 4.5 3 9.5 7.5 5 13 11 7 a repetitive short circuit shutdown current limit i l(scr) t j = t jt (see timing diagrams, page 10 ) -- 4 -- a output clamp (inductive load switch off) at v out = v bb - v on(cl) i l = 40 ma: v on(cl) 41 47 53 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k reverse battery (pin 3 to 1) 10 ) - v bb -- -- 32 v diagnostic characteristics open load detection current t j = - 40 c : (on - condition) t j =25 ..150c: i l (ol) 10 10 -- -- 200 150 ma open load detection voltage 11 ) (off - condition) t j = - 40..150c: v out(ol) 2 3 4 v internal output pull down (pin 5 to 1), v out =5 v, t j = - 40..150c r o 4 10 30 k ? 8 ) add i st , if i st > 0, add i in , if v in >5.5 v 9 ) integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuo us repetitive operation. 10 ) requires 150 ? resistor in gnd connection. the reverse load current through the intrinsic drain - source diode has to be limited by the connected load. note that the power dissipation is higher compared to normal operating c onditions due to the voltage drop across the intrinsic drain - source diode. the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 2 and circuit page 8 ). 11 ) external pull up resistor required for open load detection in off state.
BTS409L1 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max data sheet 6 2013 - 10 - 10 input and status feedback 12 ) input resistance see circuit page 7 r i 2.5 3.5 6 k ? input turn - on threshold voltage t j = - 40..+150c: v in(t+) 1.7 -- 3.5 v input turn - off threshold voltage t j = - 40..+150c: v in(t - ) 1.5 -- -- v input threshold hysteresis ? v in(t) -- 0.5 -- v ? off state input current (pin 2), v in = 0.4 v, t j = - 40..+150c i in(off) 1 -- 50 ? a on stat e input current (pin 2), v in = 3.5 v, t j = - 40..+150c i in(on) 20 50 90 ? a delay time for status with open load after switch off (see timing diagrams, page 11 ), t j = - 40..+150c t d(st ol4) 100 400 800 ? s status invalid after posit ive input slope (open load) t j = - 40 ... +150c: t d(st) -- 250 600 ? s status output (open drain) zener limit voltage t j = - 40...+150c, i st = +1.6 ma: st low voltage t j = - 40...+25c, i st = +1.6 ma: t j = +150c, i st = +1.6 ma: v st(high) v st(low) 5.4 -- -- 6.1 -- -- -- 0.4 0.6 v 12 ) if a ground resistor r gnd is used, add the voltage drop across this resistor.
BTS409L1 data sheet 7 2013 - 10 - 10 truth table input - output status level level normal opera tion l h l h h h open load l h 13 ) h h (l 14 ) ) l short circuit to v bb l h h h l 15 ) h (l 16 ) ) over tem - perature l h l l h l under - voltage l h l l h h over voltage l h l l h h l = "low" level x = don't care z = high impedance, potential depends on external circuit h = "high" level status signal after the time delay shown in the diagrams (see fig 5. page 11 ... 12 ) 13 ) power transistor off, high impedance 14 ) with external resistor between pin 3 and pin 5 15 ) an external short of output to v bb , in the off state, causes an internal current from output to ground. if r gnd is used, an offset voltage at the gnd and st pins will occur and the v st low signal may be errorious. 16 ) low resistance to v bb may be detected in on - state by the no - load - detection terms input circuit (esd protection) esd z ener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). status output esd - zener diode: 6.1 v typ., max 5 ma; r st(on) < 380 ? at 1.6 ma, esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). inductive and overvoltage output clamp v on clampe d to 47 v typ. profet v in st out gnd bb v st v in i st i in v bb i bb i l v out i gnd v on 1 2 4 3 5 r gnd in gnd i r esd-zd i i i st gnd esd- zd +5v r st(on) + v bb out gnd profet v z v on
BTS409L1 data sheet 8 2013 - 10 - 10 overvolt. and reverse batt. protection v z1 = 6.2 v typ., v z2 = 47 v typ., r gnd = 150 ? , r st = 15 k ? , r i = 3.5 k ? typ. open - load detection on - state diagnostic condition: v on < r on * i l(ol) ; in high off - state di agnostic condition: v out > 3 v typ.; in low gnd disconnect any kind of load. in case of input=high is v out ? v in - v in(t+) . due to v gnd >0, no v st = low signal available. gnd disconnect with gnd pull up any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd >0, no v st = low signal available. v bb disconnect with energized inductive load normal load current can be handled by the profet itself. + v bb in st st r in r gnd gnd r signal gnd logic profet v z2 i r v z1 open load detection logic unit + v bb out on v on open load detection logic unit v out signal gnd r ext r o off profet v in st out gnd bb v bb 1 2 4 3 5 v in v st v gnd profet v in st out gnd bb v bb 1 2 4 3 5 v gnd v in v st profet v in st out gnd bb v bb 1 2 4 3 5 high
BTS409L1 data sheet 9 2013 - 10 - 10 v bb disconnect with charged external inductive load if other external inductive loads l are connected to the profet, additional elements like d are necessary. inductive load switch - off energy dissipation energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = ? on(cl) i l (t) dt, with an approximate solution for r l ? 0 ? : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out ( cl ) | ) maximum allowable load inductance for a single switch off l = f (i l ); t j,start = 150c, t c = 150c const., v bb = 12 v, r l = 0 ? l [mh] i l [a] transient thermal impedance chip case z thjc = f (t p )z thjc [k/w] t p [s] profet v in st out gnd bb 1 2 4 3 5 v bb high s d profet v in st out gnd bb = e e e e as bb l r e load l r l { z l 1 10 100 1000 10000 1 2 3 4 5 0.01 0.1 1 10 1e-5 1e-4 1e-3 1e-2 1e-1 1e0 1e1 1e2 0 0.01 0.02 0.05 0.1 0.2 0.5 d=
BTS409L1 data sheet 10 2013 - 10 - 10 timing diagrams figure 1 a : v bb turn on: proper turn on under all conditions figur e 2 a : switching a lamp, figure 2 b : switching an inductive load *) if the time constant of load is too large, open - load - status may occur figure 3 a : short circuit shut down by overtempertature, reset by cooling heating up may require several milliseconds, depending on external conditions in v out t v bb st open drain in st out l t v i in st l t v i *) out t d(st) i l(ol) in st l t i l(scr) i i l(scp)
BTS409L1 data sheet 11 2013 - 10 - 10 figure 4 a : overtemperature: reset if t j < t jt figure 5 a : open load: detection in on - state, turn on/off to open load the status delay time t d(st ol4) allows to ditinguish between the failure modes "open load" and "overtemperature". figure 5 b : open load: d etection in on - state, open load occurs in on - state t d(st ol1) = 30 ? s typ., t d(st ol2) = 20 ? s typ figure 5 c : open load: detection in on - and off - state (with r ext ), turn on/off to open load in st out j t v t in st out l t v i open t d(st) t d(st ol4) in st out l t v i open normal normal t d(st ol1) t d(st ol2) in st out l t v i open t d(st)
BTS409L1 data sheet 12 2013 - 10 - 10 figure 6 a : undervoltage: figure 6 b : undervoltage restart of charge pump charge pump starts at v bb(ucp) =5.6 v typ. figure 7 a : overvoltage: in v out t v bb st open drain v v bb(under) bb(u rst) bb(u cp) v bb(under) v v bb(u rst) v bb(over) v bb(o rst) v bb(u cp) off-state on-state v on(cl) v bb v on off-state in v out t v bb st on(cl) v v bb(over) v bb(o rst)
BTS409L1 data sheet 13 2013 - 10 - 10 package and ordering code all dimensions in mm pg - to263 - 5 - 2 ordering code BTS409L1 e3062a sp001104814 published by infineon technologies ag , bereichs kommunikation d - 81726 mnchen ? infineon technologies ag 2013 all rig hts reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditio ns and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such compon ents can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and /or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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